Design structure, structure and method of using as

专利名称：Design structure, structure and method of

using asymmetric junction engineered SRAMpass gates

发明人：Brent A. Anderson,Edward J. Nowak申请号：US12190040申请日：20080812公开号：US07791928B2公开日：20100907

专利附图：

摘要：A design structure, structure and method of using and/or manufacturingstructures having asymmetric junction engineered SRAM pass gates is provided. The

method includes applying a voltage through asymmetric pull-down nFETs with highjunction leakage from their body to their source and low junction leakage from the bodyto their drain; applying a voltage through asymmetric pull-up pFETs with high junctionleakage from their body to their source and low junction leakage from the body to theirdrain; and applying a voltage through asymmetrical pass gates which provide low leakageSOI logic.

申请人：Brent A. Anderson,Edward J. Nowak

地址：Jericho VT US,Essex Junction VT US

国籍：US,US

代理机构：Roberts Mlotkowski Safran & Cole, P.C.

代理人：Anthony J. Canale

更多信息请下载全文后查看